DIRECT-CURRENT MEASUREMENT OF HALL EFFECT IN TRIGONAL SELENIUM SINGLE CRYSTAL

被引:22
作者
HELESKIVI, J
STUBB, T
SUNTOLA, T
机构
[1] State Institute for Technical Research, Semiconductor Laboratory and Technical University, Laboratory of Electron Physics, Helsinki
关键词
D O I
10.1063/1.1658102
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Hall effect in trigonal selenium single crystals has been measured by a dc method. The measurements give a carrier concentration of 0.5×10 15 cm-3 at room temperature and 1015 cm -3 at 100°K. The conductivity is of p type within the entire temperature range. By illumination with extrinsic light the carrier concentration has to a certain extent turned out to be independent of the intensity of light. The mobility calculated from a barrier model is about 260 cm2/V sec at room temperature in the direction of the c axis. The value is considerably higher than earlier reported values. © 1969 The American Institute of Physics.
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页码:2923 / +
页数:1
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