AC PHOTOCONDUCTIVITY AND OPTICAL-PROPERTIES OF BULK POLYCRYSTALLINE AND AMORPHOUS INXSE1-X THIN-FILMS

被引：31

作者：

KENAWY, MA

ZAYED, HA

ELSOUD, AMA

机构：

[1] University College for Women, Ain Shams University, Cairo

[2] National Research Centre, Dokki, Cairo

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1990年 / 1卷 / 02期

关键词：

D O I：

10.1007/BF00694919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The a.c. photoconductivity of bulk polycrystalline InxSe1-x and the optical properties of amorphous InxSe1-x thin films were investigated. The effect of heat treatment on the absorption coefficient of InSe thin films was also studied. The spectral response of the photoconductivity of polycrystalline InxSe1-x related to the near-edge absorption spectrum, shows a well-defined maximum corresponding to the width of the forbidden gap. Polycrystalline InxSe1-x realizes the behaviour of photoconductors which are sensitive in a spectral range between 400 and 1700 nm. Optical absorption of amorphous InxSe1-x thin films was recorded as a function of photon energy and the data were used to deduce the value of optical energy gap of the films. It was found that the optical energy gap decreased with increasing indium content in both bulk polycrystalline and amorphous thin films. The effect of heat treatment on the optical gap of the film has been interpreted in terms of the density of states model of Mott and Davis. © 1990 Chapman and Hall Ltd.

引用

页码：115 / 117

页数：3

共 11 条

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