GRAIN-BOUNDARY EFFECTS ON THE ELECTRICAL BEHAVIOR OF AL-POLY-SI SCHOTTKY-BARRIER SOLAR-CELLS

被引：19

作者：

WU, CMM

YANG, ES

HWANG, W

CARD, HC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：687 / 692

页数：6

共 14 条

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DEY, SK .

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[2]

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[3] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[4] 15-PERCENT EFFICIENT SILICON MIS SOLAR-CELL [J].

GODFREY, RB ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :637-639

[5] 655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].

GODFREY, RB ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :790-793

[6]

GUY AG, 1972, INTRO MAT SCI, P214

[7]

KOZMIERSKI LL, 1978, SOLID STATE ELECTRON, V21, P1545

[8] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J].

LANZA, C ;

HOVEL, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :392-396

[9] CAST POLYCRYSTALLINE SILICON SCHOTTKY-BARRIER SOLAR-CELLS [J].

LILLINGTON, DR ;

TOWNSEND, WG .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :471-472

[10]

SCHUTTKE GH, 1977, DOEJPL954144781 FIN, P48

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