HOT CARRIER RELIEF OF METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY USING WORK-FUNCTION ENGINEERING

被引：1

作者：

SCHWALKE, U ^{[1
]}

HANSCH, W ^{[1
]}

LILL, A ^{[1
]}

机构：

[1] SIEMENS AG, CORP RES & DEV, W-8000 MUNICH 83, GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

HOT-CARRIER DEGRADATION; WORK-FUNCTION ENGINEERING; P+ POLYCIDE GATES; DEVICE SIMULATION; HOT-CARRIER INJECTION; CHARGE PUMPING;

D O I：

10.1143/JJAP.29.L2286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed analysis of hot-carrier-degraded NMOS and PROS devices with either n+ or p+ gates is presented. For this analysis, we utilized a new simulation tool which allows direct monitoring of the buildup of charge and interface states during the DC stress experiments. The impact of the work-function difference of the n+ and p+ gate material on the injection conditions of hot carriers into the gate oxide will also be considered. Our results indicate that both NMOS and PMOS FETs and p+ gates are superior regarding hot-carrier stability.

引用

页码：L2286 / L2288

页数：3