ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS

被引：35

作者：

PATRICK, L

CHOYKE, WJ

机构：

来源：

PHYSICAL REVIEW LETTERS | 1959年 / 2卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.2.48

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：48 / 50

页数：3

相关论文

共 6 条

[1] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
BURTON, JA
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[2] ABSORPTION OF LIGHT IN ALPHA SIC NEAR THE BAND EDGE
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[4] STRUCTURE AND CHARACTERISTICS OF SILICON CARBIDE LIGHT-EMITTING JUNCTIONS
PATRICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (07) : 765 - 776
[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL SILICON CARBIDE
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[6] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM
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