RADIATION STUDIES AND OPERATIONAL PROJECTIONS FOR SILICON IN THE ATLAS INNER DETECTOR

被引：83

作者：

CHILINGAROV, A

FEICK, H

FRETWURST, E

LINDSTROM, G

ROE, S

SCHULZ, T

机构：

[1] UNIV HAMBURG,INST EXPTL PHYS,HAMBURG,GERMANY

[2] CERN,CH-1211 GENEVA,SWITZERLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 360卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(95)00110-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The current models for bulk damage in high resistivity silicon have been reviewed. The damage constants were obtained from a global data survey. On this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10 year LHC operation is forecasted.

引用

页码：432 / 437

页数：6

共 29 条

[1]

Van Ginneken, Technical Report FN-522, (1989)

[2]

Ougouag, Et al., IEEE Trans. Nucl. Sci., 37 NS, 6, (1990)

[3]

Annual Book of ASTM Standards, Vol 12.02, (1985)

[4]

Namenson, Wolicki, Messenger, Average Silicon Neutron Displacement Kerma Factor at 1 MeV, IEEE Transactions on Nuclear Science, 29 NS, (1982)

[5]

Brede, Et al., Nucl. Instr. and Meth. A, 274, (1989)

[6]

Leon Florian, Tavlet, CERN/TIS, (1991)

[7]

Edwards, Perry, Rutherford Appleton Laboratory, RAL Report RAL-90-065, (1990)

[8]

Wunstorf, Et al., Nucl. Phys. B, 23 A, (1991)

[9]

Edwards, Et al., Nucl. Instr. and Meth. A, 310, (1991)

[10]

Ziock, Et al., IEEE Trans. Nucl. Sci., 38 NS, 2, (1991)

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