EFFECTIVE TRAP CONCENTRATION IN PHOTO REFRACTIVE CDTE-V AND ZNCDTE-V CRYSTALS

被引：16

作者：

LAMBERT, B

GAUNEAU, M

GRANDPIERRE, G

SCHOISSWOHL, M

VONBARDELEBEN, HJ

LAUNAY, JC

MAZOYER, V

AOUDIA, A

RZEPKA, E

MARFAING, Y

TRIBOULET, R

机构：

[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75230 PARIS 05,FRANCE

[2] PRAME,F-33165 ST MEDARD,FRANCE

[3] CNRS,F-92195 MEUDON,FRANCE

来源：

OPTICAL MATERIALS | 1995年 / 4卷 / 2-3期

关键词：

D O I：

10.1016/0925-3467(94)00072-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

From correlated SIMS and EPR studies on high resistive, vanadium doped CdTe and ZnCdTe bulk crystals we have determined the total V concentration [V] and the [V3+] and [V2+] concentration respectively. This allows us to estimate the effective trap concentration N-eff=[V2+][V3+]/[V2+]+[V3+], which is one important parameter for photorefractive applications. The values of N-eff obtained are in good agreement with those previously deduced from photorefractive measurements.

引用

页码：267 / 270

页数：4

共 7 条

[1]

BREMOND G, COMMUNICATION

[2]

BREMOND G, 1995, OPT MATER, P246

[3] GROWTH, SPECTROSCOPIC AND PHOTOREFRACTIVE INVESTIGATION OF VANADIUM-DOPED CADMIUM TELLURIDE [J].

LAUNAY, JC ;

MAZOYER, V ;

TAPIERO, M ;

ZIELINGER, JP ;

GUELLIL, Z ;

DELAYE, P ;

ROOSEN, G .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (01) :33-40

[4] PHOTOREFRACTIVITY AT 1.5-MU-M IN CDTE-V [J].

PARTOVI, A ;

MILLERD, J ;

GARMIRE, EM ;

ZIARI, M ;

STEIER, WH ;

TRIVEDI, SB ;

KLEIN, MB .

APPLIED PHYSICS LETTERS, 1990, 57 (09) :846-848

[5]

RZEPKA E, 1993, P INT C 2 6 COMPOUND

[6] ELECTRON-PARAMAGNETIC-RESONANCE AND AN OPTICAL INVESTIGATION OF PHOTOREFRACTIVE VANADIUM-DOPED CDTE [J].

SCHWARTZ, RN ;

ZIARI, M ;

TRIVEDI, S .

PHYSICAL REVIEW B, 1994, 49 (08) :5274-5282

[7]

VONBARDELEBEN HJ, 1993, APPL PHYS LETT, V68, P1140

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