METALLIC IMPURITY-ACTIVATED CRYSTAL-GROWTH OF BORON PHOSPHIDE BY CHEMICAL VAPOR-DEPOSITION AND ITS PHYSICAL-PROPERTIES

被引：5

作者：

MOTOJIMA, S ^{[1
]}

MIURA, Y ^{[1
]}

SUGIYAMA, K ^{[1
]}

TAKAHASHI, Y ^{[1
]}

机构：

[1] GIFU UNIV, FAC ENGN, DEPT SYNTH CHEM, GIFU 504, JAPAN

来源：

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN | 1975年 / 48卷 / 11期

关键词：

D O I：

10.1246/bcsj.48.3161

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：3161 / 3167

页数：7

共 24 条

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[2]

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[4]

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[5] CRYSTAL-GROWTH OF BORON MONOPHOSPHIDE FROM METAL PHOSPHIDE SOLUTIONS [J].

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JACKSON, JM ;

SMELTZER, RK .

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[6] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].

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CHU, SC .

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[7] GROWTH OF BORON MONOPHOSPHIDE CRYSTALS BY CHEMICAL TRANSPORT [J].

CHU, TL ;

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SMELTZER, RK .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) :254-&

[8]

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[9]

ELLIOT RP, 1964, CONSTITUTION BINA S1

[10]

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