EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS

[1] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[2] EATON SS, 1976, IEDM, P192

[3] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 63 - 65

[4] Lehovec K., 1976, International Electron Devices Meeting. (Technical digest), P283

[5] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 309 - 314

[6] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023

[7] [No title captured]

[1] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[2] EATON SS, 1976, IEDM, P192

[3] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 63 - 65

[4] Lehovec K., 1976, International Electron Devices Meeting. (Technical digest), P283

[5] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 309 - 314

[6] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023

[7] [No title captured]