CONTROLLED UNIFORM GROWTH OF GAINASP-INP STRUCTURES FOR LASER APPLICATION ON 2 INCH WAFERS BY LP-MOVPE AT 20 MBAR

被引：9

作者：

MEYER, R

GRUTZMACHER, D

JURGENSEN, H

BALK, P

机构：

[1] RWTH, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90541-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：285 / 291

页数：7

共 19 条

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[17] LARGE AREA GROWTH OF EXTREMELY UNIFORM ALGAAS/GAAS QUANTUM WELL STRUCTURES FOR LASER APPLICATIONS BY EFFECTIVE LP-MOVPE [J].

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