GAINASP INP INTEGRATED RIDGE LASER WITH A BUTT-JOINTED TRANSPARENT OPTICAL WAVE-GUIDE FABRICATED BY SINGLE-STEP METALORGANIC VAPOR-PHASE EPITAXY

被引：8

作者：

REMIENS, D

ROSE, B

CARRE, M

HORNUNG, V

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux, 196, Avenue Henri Ravéra

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic integration between an active and an external passive waveguide in such a way they are directly butt-jointed in a single epitaxial step is demonstrated in the InP system. The growth behavior during nonplanar metalorganic vapor-phase epitaxy on a patterned InP substrate was investigated by using a periodic structure on GaInAs or InGaAsP/InP layers. A 1.5-mm-long ridge laser consisting of an active guide butt-jointed to a transparent waveguide has exhibited lasing oscillation at 1.5 μm with a threshold current of 82 mA. A coupling coefficient of 60% has been experimentally measured.

引用

页码：2450 / 2453

页数：4

共 6 条

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