COMPARISON OF SILICON CONTAINING RESIST AND SILYLATION OF IMAGED RESIST FOR MULTILAYER RESIST LITHOGRAPHY ON A METAL LIFT-OFF APPLICATION

被引：1

作者：

MIURA, S

GRECO, S

MACK, G

机构：

[1] IBM Corporation, General Technology Division, New York 12533, Hopewell Junction

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 06期

关键词：

D O I：

10.1149/1.2085870

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A comparison of two multilayer resist systems is presented here by evaluation on a metal lift-off application. A silicon containing resist and the chemical silylation of imaged resist are characterized for use in metal lift-off. The materials and process details are described. Both methods show adequate performance for the application studied here. However, the thermal stability of the silicon resist is questionable for metal deposition and thus requires UV hardening which complicates this bilayer process. Conversely, silylation of imaged resist simultaneously hardens the material but requires this extra step to impart oxygen plasma resistance.

引用

页码：1765 / 1769

页数：5

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