EFFECTIVE MASS TENSOR IN UNIAXIALLY STRESSED N-TYPE INSB

被引:12
作者
ZUKOTYNS.S
SALEH, N
机构
来源
PHYSICA STATUS SOLIDI | 1970年 / 38卷 / 02期
关键词
D O I
10.1002/pssb.19700380207
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:571 / &
相关论文
共 19 条
[1]  
BIR GL, 1962, SOV PHYS-SOLID STATE, V3, P221
[3]   DIELECTRIC CONSTANT OF GERMANIUM AND SILICON AS A FUNCTION OF VOLUME [J].
CARDONA, M ;
PAUL, W ;
BROOKS, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :204-206
[4]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[5]   TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) :129-148
[6]   VALENCE BAND STRUCTURE OF GERMANIUM [J].
FAWCETT, W .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P) :931-&
[7]   SOME TRANSPORT PROPERTIES OF SEMICONDUCTORS UNDER UNIAXIAL STRESS [J].
GRYNBERG, M .
PHYSICA STATUS SOLIDI, 1966, 13 (01) :277-&
[8]  
GUSEVA GI, 1963, SOV PHYS-SOL STATE, V4, P1824
[9]  
HAGA H, 1963, J PHYS SOC JAPAN, V18, P777
[10]  
HILSUM C, 1966, SEMICONDUCTORS SEMIM, V1