EVIDENCE FOR INTRINSIC INTERFACIAL STRAIN IN LATTICE-MATCHED INXGA1-XAS/INP HETEROSTRUCTURES

被引：46

作者：

VANDENBERG, JM

MACRANDER, AT

HAMM, RA

PANISH, MB

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.44.3991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A fully dynamical high-resolution x-ray-diffraction study of a nominally lattice-matched In0.53Ga0.47As/InP heterostructure has been carried out. This study reveals the presence of net intrinsic interfacial strains that are produced by the difference in bond lengths on each side of the interfaces.

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页码：3991 / 3994

页数：4

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