RESONANT ELECTRON SPIN-FLIP RAMAN-SCATTERING IN ZN1-XMNXTE

被引：3

作者：

HALSALL, MP ^{[1
]}

BOYCE, PJ ^{[1
]}

WOLVERSON, D ^{[1
]}

DAVIES, JJ ^{[1
]}

ASHENFORD, DE ^{[1
]}

LUNN, B ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 83卷 / 02期

关键词：

D O I：

10.1016/0038-1098(92)90880-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1-mu-m epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (approximately 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power.

引用

页码：85 / 88

页数：4

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