PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS

被引:2
作者
LITTLE, RG
GREENWALD, AC
机构
关键词
D O I
10.1109/TNS.1981.4331513
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1751 / 1753
页数:3
相关论文
共 6 条
[1]   PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].
GREENWALD, AC ;
KIRKPATRICK, AR ;
LITTLE, RG ;
MINNUCCI, JA .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787
[2]   PULSED ELECTRON-BEAM IRRADIATION OF ION-IMPLANTED COPPER SINGLE-CRYSTALS [J].
HIRVONEN, JK ;
POATE, JM ;
GREENWALD, A ;
LITTLE, R .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :564-566
[3]  
LITTLE RG, 1980, 14TH PULS POW MOD S, P134
[4]  
OLSEN CL, 1975, PHYS FLUIDS, V18, P585
[5]  
SPAEPEN F, 1979, LASER SOLID INTERACT, P73
[6]  
WHITE CW, 1980, SOLID STATE TECHNOL, V23, P109