PREPARATION AND ACTIVATION OF NEA GAP SURFACES

被引:5
作者
MIYAO, M
GOTO, R
FUJIOKA, T
SUKEGAWA, T
HAGINO, M
机构
[1] Research Institute of Electronics, Shizuoka University, Hamamatsu, 432
关键词
D O I
10.1016/0039-6028(79)90471-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The (100) surface of Gap with an intentional pre-oxidiy.ed overlayer showed clear LEED pattern of 4 × 1 structure by the heating at 680°C. This 4 × 1 LEED pattern changed to the 1×1 pattern by the adsorption of Cs at 0.22 monolayer. Furthermore, cesiation buried this pattern under the background. It was also found that the cesium layer adsorbed on the clear GaP surface could not grow over one monolayer. The photoresponse from these surface reached a maximum at θ = 0.9. The cesium atoms adsorbed on GaP surfaces were evaporated rapidly by heating over 450°C and disappeared by heating over 600°C for 3 min. Differences in photoemission, thermal desorption and adsorption of Cs between (100) and (111) P surfaces were not found. © 1979.
引用
收藏
页码:888 / 893
页数:6
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