X-RAY DETERMINATION OF STRAIN AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED LAYERS

被引：58

作者：

SPERIOSU, VS

GLASS, HL

KOBAYASHI, T

机构：

[1] Electronics Research Center, Rockwell International Corp., Anaheim

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantitative values for the strain and damage distributions in ion-implanted layers are obtained by the application of a kinematical model of x-ray diffraction. Distributions are synthesized by matching experimental and theoretical rocking curves. The method is applicable to ion-implanted, diffused, or as-grown multilayer thin structures.

引用

页码：539 / 542

页数：4