DEPTH PROFILING OF LIGHT-Z ELEMENTS WITH ELASTIC RESONANCES - OXYGEN PROFILING WITH THE 3.045 MEV O-16(ALPHA,ALPHA)O-16 RESONANCE

Depth profiling of light elements in high-Z substrates can be done with RBS using elastic resonances. With the resonant signal in the backscattered spectrum several parameters can be associated such as height, position, yield and FWHM. The dependence of the parameters on incident beam energy will be described. The influence of the energy spread and of the detector resolution, which limits the use and accuracy, is discussed. Computer calculations are given to establish the validity of the model and to illustrate the restrictions. A methodology which uses the different parameters is proposed. Experimental results are shown for the depth profiling of oxygen in 20 nm, 89 nm and 500 nm thick oxides with the elastic 3.045 MeV O-16(alpha, alpha)O-16 resonance.