CARBON IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：25

作者：

STRINGFELLOW, GB

STALL, R

KOSCHEL, W

机构：

[1] CORNELL UNIV,NATL RES RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期

关键词：

D O I：

10.1063/1.92284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 157

页数：2

共 10 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

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WHITE, AM .

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[2]

CHATTOPADHYAY D, 1980, 15TH P INT C PHYS SE

[3]

CHATTOPADHYAY D, UNPUBLISHED

[4]

GOLDSTEIN B, 1960, B AM PHYS SOC, V2, P407

[5]

KOSCHEL W, UNPUBLISHED

[6]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[7] ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS [J].

STRINGFELLOW, GB ;

KUNZEL, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3254-3261

[8] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS [J].

STRINGFELLOW, GB ;

LINNEBACH, R .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2212-2217

[9] ELECTRON-MOBILITY IN COMPENSATED GAAS AND ALXGA1-XAS [J].

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :540-542

[10] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

REINHART, FK ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :118-120

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