REDUCTION OF SHEAR-STRENGTH AND PHASE-TRANSITION IN SHOCK-LOADED SILICON

[1] ELECTRICAL MEASUREMENTS IN SILICON UNDER SHOCK-WAVE COMPRESSION [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5007 - 5012

[2] REVISED CALIBRATION FOR HIGH PRESSURE ELECTRICAL RESISTANCE CELL [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (11) : 1667 - +

[3] GOTO T, 1980, SCI REP RES TOHOKU A, V29, P32

[4] AXIAL YIELD STRENGTHS AND 2 SUCCESSIVE PHASE TRANSITION STRESSES FOR CRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1897 - &

[5] CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J]. SCIENCE, 1963, 139 (355) : 762 - &

[6] JONES OE, 1971, NBS SPEC PUBL, V326, P229

[7] ELASTIC MODULI OF SILICON VS HYDROSTATIC PRESSURE AT 25.0DEGREECS + MINUS195.8DEGREESC [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2161 - &

[8] PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 451 - &

[9] PAVLOVSKII MN, 1968, FIZ TVERD TELA+, V9, P2514

[10] ULTRAHIGH PRESSURE DIAMOND-ANVIL CELL AND SEVERAL SEMICONDUCTOR PHASE-TRANSITION PRESSURES IN RELATION TO FIXED-POINT PRESSURE SCALE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (08) : 973 - 979

[1] ELECTRICAL MEASUREMENTS IN SILICON UNDER SHOCK-WAVE COMPRESSION [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5007 - 5012

[2] REVISED CALIBRATION FOR HIGH PRESSURE ELECTRICAL RESISTANCE CELL [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (11) : 1667 - +

[3] GOTO T, 1980, SCI REP RES TOHOKU A, V29, P32

[4] AXIAL YIELD STRENGTHS AND 2 SUCCESSIVE PHASE TRANSITION STRESSES FOR CRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1897 - &

[5] CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J]. SCIENCE, 1963, 139 (355) : 762 - &

[6] JONES OE, 1971, NBS SPEC PUBL, V326, P229

[7] ELASTIC MODULI OF SILICON VS HYDROSTATIC PRESSURE AT 25.0DEGREECS + MINUS195.8DEGREESC [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2161 - &

[8] PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 451 - &

[9] PAVLOVSKII MN, 1968, FIZ TVERD TELA+, V9, P2514

[10] ULTRAHIGH PRESSURE DIAMOND-ANVIL CELL AND SEVERAL SEMICONDUCTOR PHASE-TRANSITION PRESSURES IN RELATION TO FIXED-POINT PRESSURE SCALE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (08) : 973 - 979