HIGH-TEMPERATURE MOBILITY OF PURE N-TYPE INP EPITAXIAL LAYERS

被引：13

作者：

BENZAQUEN, M

WALSH, D

MAZURUK, K

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.36.4388

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4388 / 4393

页数：6

共 23 条

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