SOME OPTICAL PROPERTIES OF LAYER-TYPE SEMICONDUCTOR GATE

被引:54
作者
TATSUYAM.C
WATANABE, Y
HAMAGUCH.C
NAKAI, J
机构
关键词
D O I
10.1143/JPSJ.29.150
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:150 / &
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共 13 条
[1]   ELECTRIC CONDUCTIVITY STUDIES OF P-GATE POLYCRYSTALS AND SINGLE CRYSTALS IN STRONG ELECTRIC FIELDS [J].
ABDULLAE.GB ;
GUSEINOV.ES ;
TAGIEV, BG .
PHYSICA STATUS SOLIDI, 1967, 20 (02) :421-&
[2]  
AOYAGI K, 1966, J PHYS SOC JPN, VS 21, P174
[3]  
BASSANI F, 1964 P INT C PHYS SE, P51
[4]   OPTICAL ABSORPTION EDGE OF GATE [J].
BREBNER, JL ;
MOOSER, E ;
FISCHER, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1417-&
[5]   OPTICAL ABSORPTION EDGE IN LAYER STRUCTURES [J].
BREBNER, JL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1427-&
[6]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[7]   ELECTRICAL RESISTIVITY AND HALL EFFECT OF SINGLE CRYSTALS OF GATE AND GASE [J].
FISCHER, G ;
BREBNER, JL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1363-&
[8]   MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].
FIVAZ, R ;
MOOSER, E .
PHYSICAL REVIEW, 1967, 163 (03) :743-&
[9]   OPTICAL REFLECTION AND ABSORPTION OF GASXSE1-X SINGLE CRYSTALS [J].
GASANOVA, NA ;
AKHUNDOV, GA ;
NIZAMETD.MA .
PHYSICA STATUS SOLIDI, 1966, 17 (01) :K131-&
[10]  
HALPERN J, 1966, J PHYS SOC JPN, VS 21, P180