QUANTIZATION OF ELECTRON-STATES IN A TWO-DIMENSIONAL GAAS IMPURITY BAND AT LOW CARRIER CONCENTRATIONS

被引：7

作者：

ENGSTROM, L

BERGGREN, KF

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 35期

关键词：

D O I：

10.1088/0022-3719/13/35/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6477 / 6481

页数：5

共 5 条

AOKI, H .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (04) :633-645

[2] ULTRATHIN DOPING LAYERS AS A MODEL FOR 2D SYSTEMS [J].

DOHLER, GH .

[3]

Mott N. F., 1979, ELECT PROCESSES NONC, V2nd

[4] CONDUCTANCE OSCILLATIONS IN A 2-DIMENSIONAL IMPURITY BAND [J].

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (16) :L617-L625

[5] 2-DIMENSIONAL SUB-BANDING IN JUNCTION FIELD-EFFECT STRUCTURES [J].

URY, I ;

HOLMKENNEDY, JW .