DEPENDENCE OF DEFECT DENSITY AND ACTIVATION-ENERGY ON DEPOSITION RATES IN SILVER FILMS

被引：6

作者：

NARAYANDAS, K

RADHAKRISHNAN, M

BALASUBRAMANIAN, C

机构：

[1] Department of Physics, Autonomous Post-Graduate Centre, University of Madras

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 01期

关键词：

D O I：

10.1002/pssa.2210560120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silver films (thickness ≈ 540 Å) are deposited with different deposition rates by thermal evaporation in vacuum (2 × 10−5 Torr) on well cleaned glass substrates. The films are subjected to constant rates of heat treatment and the variations of electrical resistance with temperature are observed. From the resistance versus temperature plots, the variations of defect density with activation energy are calculated. It is found that the defect density F0(E)max and the activation energy Emax increase with the increase of deposition rate. The results are explained from the sheet resistance estimated prior to heat treatment. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：195 / 198

页数：4

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