ION PROBE ANALYSIS OF INDIUM-TIN OXIDE INDIUM-PHOSPHIDE JUNCTIONS

被引：5

作者：

BACHMANN, KJ

BITNER, T

THIEL, FA

SINCLAIR, WR

SCHREIBER, H

SCHMIDT, PH

机构：

[1] Bell Laboratories, Murray Hill

来源：

SOLAR ENERGY MATERIALS | 1979年 / 1卷 / 3-4期

关键词：

D O I：

10.1016/0165-1633(79)90043-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The chemical nature of indium-tin oxide (ITO)/indium phosphide junctions prepared via rf sputtering of ITO onto InP single crystal substrates is investigated by ion microprobe analysis. At elevated substrate temperature (250°C) Sn penetrates into the InP forming a buried np homojunction. At room temperature the junction is either a very shallow buried homojunction or an SIS structure. © 1979.

引用

页码：249 / 255

页数：7

共 9 条

[1] Sree Harsha, Bachmann, Schmidt, Spencer, Thiel, Appl. Phys. Lett., 30, (1977)
[2] Bachmann, Sinclair, Thiel, Schreiber, Schmidt, Spencer, Feldmann, Buehler, Conf. Rec. 13th IEE Photovoltaic Specialists Conf., (1978)
[3] Shewchun, Loferski, Singh, Dubow, Spitzer, Conf. Rec. 13th IEEE Photovoltaic Specialists Conf., (1978)
[4] Singh, Shewchun, J. Appl. Phys., 49, (1978)
[5] Manasevit, Hess, Dapkus, Ruth, Yang, Campbell, Johnson, Moudy, Bibe, Fabick, Fahrenbruch, Tsai, Conf. Rec. 13th IEEE Photovoltaic Specialists Conf., (1978)
[6] Lewis, ARPA/NBS Workshop IV Surface Analysis for Silicon Devices, NBS special publication 400-23, (1975)
[7] Bachmann, Buehler, Shay, Strnad, J. Electron. Mater., 4, (1975)
[8] Bachmann, Buehler, The growth of InP crystals from the melt, Journal of Electronic Materials, 3, (1973)
[9] Morabito, Lewis, Anal. Chem., 45, (1973)

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