EFFECT OF AMBIPOLAR DIFFUSION ON THE HOT-CARRIER RELAXATION IN SEMICONDUCTORS

被引：10

作者：

ALGARTE, ACS

机构：

[1] Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13081 Campinas, So Paulo

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.43.2408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the change in the carrier density due to ambipolar diffusion on the cooling of hot plasmas in semiconductors is investigated. It is shown that the diffusion contributes to a warm-up of the plasma.

引用

页码：2408 / 2411

页数：4

共 6 条

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