EFFECTS OF UNIAXIAL-STRESS ON HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS .1. THEORY

被引：48

作者：

LEE, J

VASSELL, MO

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.8855

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8855 / 8860

页数：6

共 15 条

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[6]

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LEE, J ;

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[9] MIXING OF VALENCE SUBBANDS IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM WELLS BY UNIAXIAL-STRESS [J].

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PHYSICAL REVIEW B, 1988, 37 (08) :4164-4170

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