TUNNELING MICROSCOPY OF 2H-MOS2 - A COMPOUND SEMICONDUCTOR SURFACE

被引：66

作者：

WEIMER, M

KRAMAR, J

BAI, C

BALDESCHWIELER, JD

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.37.4292

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4292 / 4295

页数：4

共 17 条

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[2] BINNIG G, 1986, IBM J RES DEV, V30, P355
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[4] ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY
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[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6195 - 6202
[5] CHARGE-DENSITY WAVES OBSERVED WITH A TUNNELING MICROSCOPE
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[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (04) : 394 - 397
[6] IMAGES OF CHARGE-DENSITY WAVES OBTAINED WITH SCANNING TUNNELING MICROSCOPY
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[J]. SURFACE SCIENCE, 1987, 181 (1-2) : 112 - 118
[7] The crystal structure of molybdenite
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[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1923, 45 : 1466 - 1471
[8] DONI E, 1986, ELECTRONIC STRUCTURE, P72
[9] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
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TERSOFF, J
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[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
[10] SCANNING TUNNELING MICROSCOPE COMBINED WITH A SCANNING ELECTRON-MICROSCOPE
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ROHRER, H
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (02) : 221 - 224

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