INDENTATION HARDNESS AND SEMICONDUCTOR-METAL TRANSITION OF GERMANIUM AND SILICON

被引：95

作者：

GERK, AP ^{[1
]}

TABOR, D ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

关键词：

D O I：

10.1038/271732a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：732 / 733

页数：2

共 8 条

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[5] PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITIONS IN AMORPHOUS SI AND GE
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[6] MOHS HARDNESS SCALE - A PHYSICAL INTERPRETATION
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (411): : 249 - 257
[7] A SIMPLE THEORY OF STATIC AND DYNAMIC HARDNESS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1948, 192 (1029): : 247 - 274
[8] Vereshchagin L. F., 1974, High Temperatures - High Pressures, V6, P505