MICROSTRIP IMPATT OSCILLATOR WITH HIGH LOCKING FIGURE OF MERIT

被引：5

作者：

GLANCE, B

机构：

[1] Crawford Hill Laboratory, Bell Telephone Laboratories Inc., Holmdel

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 11期

关键词：

D O I：

10.1109/PROC.1969.7452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microstrip IMPATT oscillators have been built at X-band and V-band in order to obtain hybrid integrated power sources for locked amplifier applications. It is shown that using a microstrip circuit shorter than a half-wavelength gives the highest locking figure of merit and therefore the largest possible locking range for a given gain. A figure of merit of 0.10 has been obtained for a locking gain of 20 dB. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：2052 / &