MACROMODELING OF FET-BIPOLAR OPERATIONAL-AMPLIFIERS

被引：20

作者：

KRAJEWSKA, G

HOLMES, FE

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA

[2] ANDICOM TECH PROD LTD,TORONTO,ONTARIO,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 06期

关键词：

D O I：

10.1109/JSSC.1979.1051319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Macromodels for MOSFET-bipolar and JFET-bipolar integrated circuit operational amplifiers are developed. The macromodel parameters are found from typical data sheet or easily measured characteristics. Comparisons of’ macromodel performance with a device-level computer simulation and with characteristics obtained experimentally for three representative PET/bipolar operational amplifiers (CA 3140, LF 355, and TL 081) are presented. The macromodel is shown to’ be’ accurate enough for general purpose applications, The advantages of the macromodel of reduced circuit complexity and reduced central processing unit (CPU) time are demonstrated. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1083 / 1087

页数：5