PROPERTIES OF THIN-FILM THERMOELECTRIC-MATERIALS - APPLICATION TO SENSORS USING THE SEEBECK EFFECT

被引:134
作者
BOYER, A
CISSE, E
机构
[1] CEM, Montepellier II, Sciences et Techniques du Languedoc, 34095 Montpellier Cédex 5, place E. Bataillon
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 13卷 / 02期
关键词
D O I
10.1016/0921-5107(92)90149-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The main thermoelectric properties, i.e. Seebeck coefficient-alpha, electrical resistivity-rho, thermal conductivity K and the coefficient Z of thermoelectric merit, are determined for narrow-gap V2VI3 semiconductors and semimetals. Variations in alpha, K and rho depending on the thickness e of the thin film are also measured. The essential technical characteristics such as the sensitivity S(f) to flux, the time constant-tau and the noise equivalent power of a wide-band radiation detector are modelled according to the adapted thermal conductance eK. The most significant results concerning specific applications are described. Knowledge of these data is useful for the production of sensors based on the Seebeck effect, such as thermocouples, thermopiles, radiation detectors, hyperfrequency power sensors and electrical converters.
引用
收藏
页码:103 / 111
页数:9
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