ATOMIC-SCALE FLUCTUATION OF THE TERRACE WIDTH ON VICINAL (001) GAAS-SURFACES

被引：9

作者：

OHKOUCHI, S

TANAKA, I

机构：

[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba, Ibaraki, 300-26

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 10B期

关键词：

SCANNING TUNNELING MICROSCOPE; VICINAL SURFACES; GAAS; MOLECULAR BEAM EPITAXY; TERRACES; ATOMIC SCALE FLUCTUATION;

D O I：

10.1143/JJAP.30.L1826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs (001) vicinal surfaces which were tilted 2 degrees toward the [010] direction were observed with a scanning tunneling microscope equipped with a molecular beam epitaxy facility. The surface of 30 monolayers of GaAs grown on a substrate consisted of both large flat and narrow terraces. On the other hand, the surface of a 1.5-mu-m-thick GaAs layer grown on a substrate consisted of relatively uniform-width terraces which reflected the off-angle. However, their terrace edges showed a large atomic-scale fluctuation.

引用

页码：L1826 / L1829

页数：4

共 5 条

[1] A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (100) GAAS VICINAL SURFACES [J].