OPTICAL-ABSORPTION IN PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS

被引：30

作者：

ANCE, C ^{[1
]}

DECHELLE, F ^{[1
]}

FERRATON, JP ^{[1
]}

LEVEQUE, G ^{[1
]}

ORDEJON, P ^{[1
]}

YNDURAIN, F ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an experimental and theoretical study of the optical absorption of amorphous silicon oxynitride films. The optical absorption coefficient-alpha in the energy range from 4 to 10 eV has been measured for SiOxNyHz films between the nitride and oxide compositions grown by plasma-enhanced chemical vapor deposition. We have also calculated the coefficient-alpha for SiOxNy alloys assuming a random mixture of Si-N and Si-O bonds within the disordered alloy. The variation of the optical gap E(g) with the composition and the appearance of steps in the optical absorption for oxygen-rich samples are discussed.

引用

页码：1399 / 1401

页数：3

共 7 条

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