THE GROWTH AND REACTIVITY OF THE SM/SI(100) INTERFACE

被引：10

作者：

ONSGAARD, J

CHRISTIANSEN, M

ORSKOV, F

GODOWSKI, PJ

机构：

[1] Fysisk Institut, Odense University

来源：

SURFACE SCIENCE | 1991年 / 247卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(91)90128-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of the Sm/Si(100) interface is described and discussed in the context of the increasing experimental insight into lanthanide/semiconductor interfaces. Silicide formation takes place in the 1 to 5 monolayers coverage region. Different ordered structures, dependent on the initial coverage and temperature treatment, are observed. Oxygen adsorption and binding is strongly promoted, both when Sm is present at the surface and when oxygen reacts with a samarium-silicide film.

引用

页码：208 / 214

页数：7

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