SOME NEW FEATURES OF THE PHOTOLUMINESCENCE OF SIC(6H), SIC(4H), AND SIC(15R)

被引：48

作者：

HABERSTROH, C ^{[1
]}

HELBIG, R ^{[1
]}

STEIN, RA ^{[1
]}

机构：

[1] SIEMENS AG, RES LABS, D-91050 ERLANGEN, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature photoluminescence (LTPL) measurements have been performed on 6H, 4H, and 15R polytype SiC crystals. In addition to well-known emission lines close to the band gap a couple of new features could be observed. Emission lines attributed to the recombination of bound excitons at aluminum acceptors have been seen in all three polytypes. A defect interpreted as a divacancy is described for SiC(4H). In SiC(6H) emission lines due to scandium centers have been observed. Furthermore the effect of a uniaxial stress on the LTPL spectrum is investigated.

引用

页码：509 / 513

页数：5

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