CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY

被引：20

作者：

STOLZ, W ^{[1
]}

HORIKOSHI, Y ^{[1
]}

NAGANUMA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPT ELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L1140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1140 / L1143

页数：4

共 11 条

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[2]

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[3]

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[7] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[8] GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

MAREE, PMJ ;

BARBOUR, JC ;

VANDERVEEN, JF ;

KAVANAGH, KL ;

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JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420

[9] LATTICE-RELAXATION OF INAS HETEROEPITAXY ON GAAS [J].

MUNEKATA, H ;

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KAO, YH .

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[10]

STOLZ W, 1988, JPN J APPL PHYS, V27

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