ELECTRICAL CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT .1.

被引:6
作者
GOSSICK, BR
机构
关键词
D O I
10.1016/0039-6028(70)90068-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:123 / &
相关论文
共 8 条
[1]  
BORNEMAN HE, 1955, J APPL PHYS, V26, P1021
[2]   NONREFLECTING BOUNDARY POTENTIAL [J].
GOSSICK, BR .
SURFACE SCIENCE, 1969, 18 (02) :181-&
[3]  
GOSSICK BR, TO BE PUBLISHED
[4]   ELECTRICAL CONTACTS TO SILICON [J].
HOOPER, RC ;
CUNNINGHAM, JA ;
HARPER, JG .
SOLID-STATE ELECTRONICS, 1965, 8 (10) :831-+
[5]   DOUBLE INJECTION IN LONG SILICON P-PI-N STRUCTURES [J].
MAYER, JW ;
MARSH, OJ ;
BARON, R .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1447-&
[7]   RECTIFICATION PROPERTIES OF METAL-SILICON CONTACTS [J].
WURST, EC ;
BORNEMAN, EH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) :235-240
[8]  
YEH TH, PRIVATE COMMUNICATIO