THE ELECTRONIC-STRUCTURE OF A BACK-GATED HIGH ELECTRON-MOBILITY TRANSISTOR

被引：14

作者：

KELLY, MJ

HAMILTON, A

机构：

[1] Cavendish Lab., Cambridge

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present variational calculations of the total energy of electrons in a two-dimensional electron gas (2DEG) in a high electron mobility structure, within which a back-gate allows the electric fields on either side of the 2DEG to be controlled independently. In particular, we examine the phase diagram of 2D electron subband occupation as a function of the back-gate bias and the total 2D carrier density. We extend our results to incorporate an applied magnetic field. We relate the results to existing data and suggest novel experiments.

引用

页码：201 / 207

页数：7

共 12 条

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