FREE-ELECTRON RECOMBINATION IN DEGENERATELY DOPED AND MODERATELY COMPENSATED GALLIUM-ARSENIDE

被引：4

作者：

ARNAUDOV, BG

DOMANEVSKII, DS

ISUSOV, AM

GARDEV, PL

EVTIMOVA, SK

机构：

[1] Semicond. Phys. Tech. Inst., Sofia Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

13;

D O I：

10.1088/0268-1242/5/6/029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature, band-edge photoluminescence spectra of degenerately doped (n=1, 2, 3, 8, 10*1019 cm-3) and compensated (K=0.05, 0.1, 0.2, 0.3, 0.5) samples have been investigated for identification of the radiative recombination mechanism and to analyse the possibility for a quantitative estimation of the Burstein-Moss shift. The measured spectra consist of two emission bands. The high-energy band (band-edge luminescence) predominates in intensity over the impurity-associated emission band. The spectral shape is discussed in accordance with theoretical ideas that it follows the free electron energy distribution. The calculated curves (over the full range of electron concentration) are in good agreement with the experimental spectra.

引用

页码：620 / 623

页数：4

共 12 条

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