LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN CARBIDE THIN-FILMS

被引：36

作者：

XUE, ZL ^{[1
]}

CAULTON, KG ^{[1
]}

CHISHOLM, MH ^{[1
]}

机构：

[1] INDIANA UNIV,DEPT CHEM,BLOOMINGTON,IN 47405

来源：

CHEMISTRY OF MATERIALS | 1991年 / 3卷 / 03期

关键词：

D O I：

10.1021/cm00015a004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：384 / 386

页数：3

共 20 条

[1]

ARMITAGE DA, 1982, COMPREHENSIVE ORGANO, V2

[2] Organometallic Azides as Precursors for Aluminum Nitride Thin Films [J].

Boyd, David C. ;

Haasch, Richard T. ;

Mantell, Daniel R. ;

Schulze, Roland K. ;

Evans, John F. ;

Gladfelter, Wayne L. .

CHEMISTRY OF MATERIALS, 1989, 1 (01) :119-124

[3]

CAULTON KG, UNPUB

[4] A CONVENIENT SYNTHESIS OF TRIALKYLALKYLIDYNE TUNGSTEN (6+) COMPOUNDS AND THE X-RAY CRYSTAL-STRUCTURE OF (ME3CCH2)3WCPH(PY) [J].

CHISHOLM, MH ;

HUFFMAN, JC ;

KLANG, JA .

POLYHEDRON, 1990, 9 (10) :1271-1276

[5] ELECTRONIC-STRUCTURE OF TUNGSTEN AND SOME OF ITS BORIDES, CARBIDES, NITRIDES, AND OXIDES BY X-RAY ELECTRON-SPECTROSCOPY [J].

COLTON, RJ ;

RABALAIS, JW .

INORGANIC CHEMISTRY, 1976, 15 (01) :236-238

[6]

CREED E, 1978, I MET SER 3, V10, P147

[7] SYNTHESIS OF THIN-FILMS BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION USING AMIDO AND IMIDO TITANIUM(IV) COMPOUNDS AS PRECURSORS [J].

FIX, RM ;

GORDON, RG ;

HOFFMAN, DM .

CHEMISTRY OF MATERIALS, 1990, 2 (03) :235-241

[8] ORGANOMETALLIC ROUTE TO THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM CARBIDE FILMS AT EXCEPTIONALLY LOW-TEMPERATURES [J].

GIROLAMI, GS ;

JENSEN, JA ;

POLLINA, DM ;

WILLIAMS, WS ;

KALOYEROS, AE ;

ALLOCCA, CM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (05) :1579-1580

[9]

GIROLAMI GS, COMMUNICATION

[10] TUNGSTEN CARBIDE POWDERS PRODUCED BY VAPOR-PHASE REACTION OF WCL6-CH4-H2 SYSTEM [J].

HOJO, J ;

OKU, T ;

KATO, A .

JOURNAL OF THE LESS-COMMON METALS, 1978, 59 (01) :85-95

← 1 2 →