SUBPICOSECOND GENERATION AND DECAY OF COHERENT PHONONS IN III-V COMPOUNDS

被引:13
作者
KUTT, W
CHO, GC
PFEIFER, T
KURZ, H
机构
[1] Inst. of Semicond. Electron. II, RWTH Aachen
关键词
D O I
10.1088/0268-1242/7/3B/018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photoexcitation of III-V compounds with a 50 fs laser pulse leads to ultrafast longitudinal field changes of up to 100 kV cm-1. These are generated via screening and transport effects of the photoexcited carriers in the surface space-charge region. The field rise is sufficiently short to impulsively launch coherent LO phonons. A detailed study of the frequency and dephasing behaviour of these phonons as a function of excitation density and excess optical excitation energy is performed in GaAs and AlGaAs.
引用
收藏
页码:B77 / B79
页数:3
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