PHOTO-ASSISTED TUNNELING AT FERROMAGNET SEMICONDUCTOR INTERFACES

被引:9
作者
PRINS, MWJ
ABRAHAM, DL
VANKEMPEN, H
机构
[1] Research Institute for Materials, University of Nijmegen, 6525 ED Nijmegen, Toernooiveld
关键词
D O I
10.1016/0039-6028(93)91066-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have measured the polarization-dependent photoresponse of ferromagnet-insulator-(III-V) semiconductor thin film tunnel structures as a function of wavelength. When the structures have no interfacial barrier, we find that the response agrees well with calculations of magneto-optical transmission through the magnetic overlayer. However, when a tunnel barrier is present and excitation nearly resonant with the semiconductor bandgap, we observe significant deviations from the magneto-optical effects. These deviations are attributed to spin-dependent electron transmission from the III-V semiconductor acting as a spin-polarized source of tunneling electrons.
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页码:750 / 753
页数:4
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