DRY ETCH GATE RECESS HIGH BREAKDOWN VOLTAGE POWER P-HEMTS

被引:15
作者
WU, CS
REN, F
PEARTON, SJ
HU, M
PAO, CK
WANG, RF
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV FLORIDA,GAINESVILLE,FL 32611
关键词
HIGH ELECTRON TRANSISTORS; POWER TRANSISTORS;
D O I
10.1049/el:19941235
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High breakdown voltage (18-20 V) and high power characteristics are obtained for a pseudomorphic InGaAs HEMT (PHEMT) processed with a novel single recess gate technique. High selectivity (> 600:1 for GaAs over AlGaAs), damage-free dry etching with excellent uniformity (+/-7% across 3'' diameter wafers, compared to +/-20% for a wet etch double recess process) was employed. The devices exhibit good f(T) values (50 GHz at V-DS of 5V and 35 GHz at V-DS of 7V) at low I-DS (100mA/mm), an essential requirement for high power performance.
引用
收藏
页码:1803 / 1805
页数:3
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