DRY ETCH GATE RECESS HIGH BREAKDOWN VOLTAGE POWER P-HEMTS

被引：15

作者：

WU, CS

REN, F

PEARTON, SJ

HU, M

PAO, CK

WANG, RF

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 21期

关键词：

HIGH ELECTRON TRANSISTORS; POWER TRANSISTORS;

D O I：

10.1049/el:19941235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High breakdown voltage (18-20 V) and high power characteristics are obtained for a pseudomorphic InGaAs HEMT (PHEMT) processed with a novel single recess gate technique. High selectivity (> 600:1 for GaAs over AlGaAs), damage-free dry etching with excellent uniformity (+/-7% across 3'' diameter wafers, compared to +/-20% for a wet etch double recess process) was employed. The devices exhibit good f(T) values (50 GHz at V-DS of 5V and 35 GHz at V-DS of 7V) at low I-DS (100mA/mm), an essential requirement for high power performance.

引用

页码：1803 / 1805

页数：3

共 6 条

[1]

CHAO PC, 1991, HEMTS HBTS DEVICES F, P77

[2]

Pao C. K., 1992, IEEE Microwave and Guided Wave Letters, V2, P394, DOI 10.1109/75.160118

[3] DRY ETCHING BILAYER AND TRILEVEL RESIST SYSTEMS FOR SUBMICRON GATE LENGTH GAAS BASED HIGH ELECTRON-MOBILITY TRANSISTORS FOR POWER AND DIGITAL APPLICATIONS [J].

REN, F ;

PEARTON, SJ ;

TENNANT, DM ;

RESNICK, DJ ;

ABERNATHY, CR ;

KOPF, RF ;

WU, CS ;

HU, M ;

PAO, CK ;

PAINE, BM ;

WANG, DC ;

WEN, CP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2949-2953

[4] 0.25-MU-M PSEUDOMORPHIC HEMTS PROCESSED WITH DAMAGE-FREE DRY-ETCH GATE-RECESS TECHNOLOGY [J].

REN, F ;

PEARTON, SJ ;

ABERNATHY, CR ;

WU, CS ;

HU, M ;

PAO, CK ;

WANG, DC ;

WEN, CP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) :2701-2706

[5]

SMITH PM, 1990, MICROWAVE J MAY, P71

[6]

WU CS, 1993, MATER RES SOC S P, V2300, P41

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