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FIELD-EFFECT TRANSISTOR NOISE AT LOW TEMPERATURES
被引:9
作者
:
SPAULDING, RA
论文数:
0
引用数:
0
h-index:
0
SPAULDING, RA
机构
:
来源
:
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS
|
1968年
/ 56卷
/ 05期
关键词
:
D O I
:
10.1109/PROC.1968.6433
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:886 / +
页数:1
相关论文
共 3 条
[1]
LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS
[J].
LAURITZEN, PO
论文数:
0
引用数:
0
h-index:
0
LAURITZEN, PO
.
SOLID-STATE ELECTRONICS,
1965,
8
(01)
:41
-+
[2]
THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
PROCEEDINGS OF THE IEEE,
1964,
52
(07)
:795
-+
[3]
VANDERZIEL A, 1962, P IRE, V50, P1808
←
1
→
共 3 条
[1]
LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS
[J].
LAURITZEN, PO
论文数:
0
引用数:
0
h-index:
0
LAURITZEN, PO
.
SOLID-STATE ELECTRONICS,
1965,
8
(01)
:41
-+
[2]
THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
PROCEEDINGS OF THE IEEE,
1964,
52
(07)
:795
-+
[3]
VANDERZIEL A, 1962, P IRE, V50, P1808
←
1
→