HIGH-TEMPERATURE ION-IMPLANTATION IN DIAMOND

被引：18

作者：

LEE, YH

BROSIOUS, PR

CORBETT, JW

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 50卷 / 01期

关键词：

D O I：

10.1002/pssa.2210500127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / 242

页数：6

共 19 条

[1]

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[2] ELECTRON-PARAMAGNETIC RESONANCE IN DIAMOND IMPLANTED AT VARIOUS ENERGIES AND TEMPERATURES [J].

BROSIOUS, PR ;

LEE, YH ;

CORBETT, JW ;

CHENG, LJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (02) :541-549

[3]

Clark C. D., 1971, Radiation Effects, V9, P219, DOI 10.1080/00337577108231052

[4] USE OF CHARACTERISTIC XRAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND [J].

DAVIDSON, LA ;

GIBBONS, JF ;

DER, RC ;

KAVANAGH, TM ;

KHAN, JM .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :295-&

[5]

Dennis J. R., 1973, Radiation Effects, V19, P67, DOI 10.1080/00337577308232220

[6]

Klyuev Yu. A., 1975, Soviet Physics - Solid State, V16, P2118

[7] ESR IN DIAMOND ELECTRON-IRRADIATED AT LOW TEMPERATURE [J].

LOMER, JN ;

WILD, AMA .

PHILOSOPHICAL MAGAZINE, 1971, 24 (188) :273-&

[8]

LOMER JN, COMMUNICATION

[9] SINGLY IONIZED N-C-N CENTER IN DIAMOND [J].

LOUBSER, JHN ;

WRIGHT, ACJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) :1129-1141

[10]

MAYER JW, 1969, APPLIED SOLID STATE, P1

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