EFFECTS OF THE I-LAYER PROPERTIES AND IMPURITY ON THE PERFORMANCE OF A-SI SOLAR-CELLS

被引:13
作者
HISHIKAWA, Y
ISOMURA, M
OKAMOTO, S
HASHIMOTO, H
TSUDA, S
机构
[1] Functional Materials Research Center, SANYO Electric Co., Ltd., Hirakata, Osaka, 573
关键词
D O I
10.1016/0927-0248(94)90054-X
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The relation between the opto-electric properties of an a-Si:H i-layer and the performance of a-Si solar cells are extensively investigated, paying careful attention to the controllable range of the opto-electric properties and the effects of the impurities. It is shown that even trace amounts (10(19) cm(-3) or less) of oxygen impurity in the i-layer affect the film properties and the solar cell performance. When the impurity concentration and other undesirable factors are suppressed, the mutual relationship among the i-layer properties becomes clear. Although there is a limitation in the controllable range of the properties of device-quality a-Si:H, techniques such as a hydrogen plasma treatment can improve the controllable range. Guidelines to design and optimize the i-layer for solar cells are discussed on the basis of these experimental results. A total-area conversion efficiency of 12.0% is achieved for a 10 cm x 10 cm integrated a-Si solar cell submodule.
引用
收藏
页码:303 / 312
页数:10
相关论文
共 18 条
[1]   AMORPHOUS THIN-FILMS FOR TERRESTRIAL SOLAR-CELLS [J].
CARLSON, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :290-295
[2]   NARROW BAND-GAP A-SI-H WITH IMPROVED MINORITY CARRIER-TRANSPORT PREPARED BY CHEMICAL ANNEALING [J].
DAS, D ;
SHIRAI, H ;
HANNA, J ;
SHIMIZU, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B) :L239-L242
[3]  
GALLAGHER A, 1989, INT J SOLAR ENERGY, V5, P193
[4]  
GANGULY G, 1992, MATER RES SOC S P, V258, P39
[5]   DEVICE-QUALITY WIDE-GAP HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY PLASMA CHEMICAL VAPOR-DEPOSITION AT LOW SUBSTRATE TEMPERATURES [J].
HISHIKAWA, Y ;
TSUGE, S ;
NAKAMURA, N ;
TSUDA, S ;
NAKANO, S ;
KUWANO, Y .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) :508-510
[6]   PRINCIPLES FOR CONTROLLING THE OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED FROM A SILANE PLASMA [J].
HISHIKAWA, Y ;
TSUDA, S ;
WAKISAKA, K ;
KUWANO, Y .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) :4227-4231
[7]   INTERFERENCE-FREE DETERMINATION OF THE OPTICAL-ABSORPTION COEFFICIENT AND THE OPTICAL GAP OF AMORPHOUS-SILICON THIN-FILMS [J].
HISHIKAWA, Y ;
NAKAMURA, N ;
TSUDA, S ;
NAKANO, S ;
KISHI, Y ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :1008-1014
[8]  
HISHIKAWA Y, 1993, IN PRESS P MATERIALS
[9]  
ISOMURA M, 1993, IN PRESS 1993 P SPIE
[10]  
MAHAN A, 1991, J APPL PHYS, V69