CHARGE RECOMBINATION IMAGING AT THE WSE2/I- INTERFACE

被引：11

作者：

CHAPARRO, AM

SALVADOR, P

TABERNERO, A

NAVARRO, R

COLL, B

CASELLES, V

机构：

[1] CSIC,INST QUIM FIS ROCASOLANO,SERRANO 119,E-28006 MADRID,SPAIN

[2] CSIC,INST OPT DAZA VALDES,E-28006 MADRID,SPAIN

[3] UNIV ILLES BALEARS,DEPT MATEMAT & INFORMAT,E-07071 PALMA DE MALLORCA,SPAIN

来源：

SURFACE SCIENCE | 1993年 / 295卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90292-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Intensity modulated photocurrent measurements obtained with a focussed laser beam have been used to obtain real video images of surface recombination processes in a photoelectrochemical cell (PEC) with micrometric lateral resolution. We report here, for the first time, photoelectrochemical images of the relaxation time constant for a holes trapped at the illuminated WSe2/I- interface, which is directly related with the surface recombination rate of electrons and holes. These images convey easyly assimilable information about the influence of the semiconductor topography (crystallographic orientations, micro-defects, etc.) on its photoelectrochemical performance.

引用

页码：457 / 461

页数：5

共 21 条

[1] IMAGE SELECTIVE SMOOTHING AND EDGE-DETECTION BY NONLINEAR DIFFUSION .2. [J].