Temperature dependence of phonon-induced electronic transitions in insulating solids

被引:11
作者
Martin, T. P. [1 ]
Fowler, W. Beall [1 ]
机构
[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 10期
关键词
D O I
10.1103/PhysRevB.2.4221
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The temperature dependence of the oscillator strength of a forbidden electronic transition at an impurity in an insulating solid is calculated, assuming that the transition is induced by a local linear electron-phonon interaction. The electronic states are allowed to couple, not merely to one configuration coordinate, but to all the modes of vibration of the imperfect crystal. The frequencies of these modes and their relative contributions to the oscillator strength are calculated using Green's-function techniques. In particulars the 4d(10) to 4d(9)5s transition of Ag+ in NaCl is considered. A model which represents the host ions as point charges is shown to be inconsistent with the experimentally determined temperature-dependent oscillator strength. Good agreement with experiment is obtained if one assumes that the short-range interaction between the Ag+ impurity and the host ions is important.
引用
收藏
页码:4221 / 4225
页数:5
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